Abstract
The authors demonstrate a high resolution lift off process for electron beam lithography using a PMMA/P(MMA 8.5 MAA) bilayer as negative tone resists. Fifty-nanometer features were achieved for metal deposition up to 100 nm thick. The process was tested on silicon substrates as well as indium tin oxide on glass transparent substrates in order to prove the applicability of the patterns for extraordinary optical transmission.
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