Electron beam irradiation enhanced varistor properties in ZnO nanowire

Keyan Sheng,Chen Zuo,Haijun Li,Pan Liu,Lige Zhang,Zhou Ding,Taiyan Chen,Jushigang Yuan,Jiang Huang,Yanying Li

doi:10.1063/5.0010841

Abstract

Through a combination of atomic and electronic structure characterization studies based on aberration-corrected transmission electron microscopy and varistor property tests, we quantitatively investigated the growth process and oxygen vacancy generation in ZnO quantum dots induced by irradiating ZnO nanowires with high-energy electron beams. These processes are associated with improved varistor performance in single-crystalline ZnO nanowires. Quantitative strain measurements revealed the formation of a strong tensile strain of up to 4.4% in the region of the ZnO quantum dots. Electron energy loss spectroscopy demonstrated a rapid increase in oxygen vacancies in ZnO under electron beam irradiation. These two major changes greatly decreased carrier transport, resulting in a 34% reduction in leakage current after irradiation at a beam voltage of 2 MeV. These experimental results suggest that ZnO is an excellent semiconductor material and shows promise for practical application in electronics.

Highlights

The evolution of the atomic and electronic structures in zinc oxide (ZnO) materials has attracted considerable interest.10,11,15,16,19–23 When combined with aberration correction and electron energy loss spectroscopy (EELS), high-resolution transmission electron microscopy (HRTEM) allows the study of the chemical composition and bonding information at the atomic scale
Through a combination of atomic and electronic structure characterization studies based on aberration-corrected transmission electron microscopy and varistor property tests, we quantitatively investigated the growth process and oxygen vacancy generation in ZnO quantum dots induced by irradiating ZnO nanowires with high-energy electron beams
These processes are associated with improved varistor performance in single-crystalline ZnO nanowires

Summary

Introduction

The evolution of the atomic and electronic structures in ZnO materials has attracted considerable interest.10,11,15,16,19–23 When combined with aberration correction and electron energy loss spectroscopy (EELS), high-resolution transmission electron microscopy (HRTEM) allows the study of the chemical composition and bonding information at the atomic scale.

Results

Conclusion