Abstract
Electron-beam-assisted evaporation is a way to lower the growth temperature and improve crystalline quality of CeO2(110) layers on Si(100) substrates. The electron-beam-assisted evaporation system is constructed utilizing an electron-beam-irradiation system with a suppressor electrode around the sample holder. The suppressor bias condition is optimized as a function of acceleration energy of assisting electrons. The epitaxial growth quality depends on the assisting electron-beam energy. Optimum electron energy is experimentally determined to be around 360 eV, wherein the epitaxial temperature is lowered to 710 °C, i.e., temperature lowering of more than 100 °C compared with the conventional growth method.
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