Abstract
The electromigration of grain boundaries has been investigated with aluminum wires (99.999% purity, 1 mm in diameter) in the temperature range 340°–540°C under a current stress of 6×10 3 A cm -2. Grain boundary migration in aluminum is found to be reduced or enhanced by the currents stress when the grain boundary migrates in or against the current direction, respectively. The effects of additions of copper, silicon and zirconium to aluminum on the electromigration of the grain boundaries have also been examined. The contribution of electromigration to normal grain boundary migration is found to be increased by the addition of solutes. The results are discussed on the basis of the impurity drag mechanism of grain boundary migration.
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