Electromechanical Properties of Piezoelectric Integrated Structures on Porous Substrates

Abstract

The fabrication of piezoelectric transducers for high resolution medical imaging applications requires a backing material to damp the piezoelectric resonance, resulting in a shorter time response, i.e. improved resolution, but lower sensitivity. Thus, the choice of such a substrate must be made according to its acoustical properties, namely the ratio of acoustic impedance of the backing material and the piezoelectric layer. Moreover, this backing material must have a relatively high attenuation, and provide good surface properties such as a low roughness and diffusion potential. Finally, the substrate material must have a good mechanical behavior at high temperature (around 900°C for the sintering of the piezoelectric thick film). In this context a review of available materials is first given, and the corresponding list is found to be quite limited. Several PZT/PGO piezoelectric thick films deposited by screen-printing have been fabricated on dense alumina [1] and have delivered good electromechanical performance, but the substrate attenuation was too low to be used as a backing for high frequency transducers. In this paper, new porous Al 2 O 3 substrates have been fabricated and used for the fabrication of a batch of piezoelectric films. The effects of a barrier layer and bottom electrode (conductive material type and thickness) are studied and related to the electromechanical performance of the piezoelectric thick film and then to the electro-acoustic properties of the ultrasonic transducer integrating these structures. Finally, these results are compared with previous studies [2] using porous PZT substrate. These comparisons are performed in terms of fabrication facility, electromechanical constants of the thick films (in thickness mode) and electro-acoustic responses of ultrasonic transducers with center frequencies over 20 MHz.