Abstract
We study electromechanical fields near the interface between a circular piezoelectric semiconductor cylinder and another piezoelectric semiconductor in which it is embedded. The cylinder is p-doped. The surrounding material is n-doped. The phenomenological theory of piezoelectric semiconductors consisting of the equations of piezoelectricity and the conservation of charge for holes and electrons is used. The theory is linearized for small carrier concentration perturbations. An analytical solution is obtained, showing the formation of a PN junction near the interface. Various electromechanical fields associated with the junction are calculated. The effects of a few physical parameters are examined.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call