Electromechanical coupling and motion transduction in β -Ga2O3 vibrating channel transistors

Abstract

We report on device physics modeling, assisted by experimental measurement results, for all-electronic transduction of resonant electromechanical motion of nanoscale β-Ga2O3 vibrating channel transistors (VCTs), including both direct readout of high frequency transmission current (without frequency down-conversion) and frequency modulation (FM) down-conversion techniques. The β-Ga2O3 VCTs under consideration have fundamental mode resonance frequencies at ∼25 MHz–1 GHz, with quality factors (Qs) of ∼100–5000 and transconductance gm at ∼0.2 nS–5 μS. In analysis of signal transduction with varying device parameters, the transistor's gate trench depth z0 and transconductance gm play key roles in improving the electromechanical coupling and device performance. Reduction of trench depth z0 can engender a major enhancement in readout current. Reducing channel thickness h and increasing channel length L can improve the readout current while downshifting the resonance frequency at the same time. We design β-Ga2O3 VCT with a suspended modulation doped field effect transistor structure for efficient operation in the GHz range. This study paves the way for future engineering of all-electronic transduction and integration of high frequency β-Ga2O3 resonators on chip with β-Ga2O3 electronics and optoelectronics.