Abstract
We report comprehensive high-frequency characteristics of pseudomorphic InAlAs/InGaAs/InP modulation doped field effect transistors having thick, dislocation-free channels with an In mole fraction compositionally graded to x=0.65 at the heterointerface. Grading was achieved by reducing the Ga effusion cell temperature during epitaxial growth. High-frequency S-parameter measurements were performed on transistors having gate lengths of Lg=0.25 μm and showed significant increases in both transconductance gm and current gain cutoff frequency fT with increasing graded channel layer thickness. The best devices with a 30 nm channel have gm=720 mS/mm and fT=120 GHz. We give data on growth conditions, layer structure, and device electrical properties.
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