Abstract
This paper presents the Electromagnetic modelling and simulation analysis of an RF MEMS Shunt switch. The Sparameters are investigated with different analysis such as changing beam structure, materials, thickness of the beam, and signal dielectric. The pull-in voltage of the proposed switch is obtained as 1.9 V. The RF-performance mainly depends on the up and down state of the switch, these analysis are done in the ANSYS HFSS simulator tool. The evaluated return and insertion losses are −44.7486 dB and −0.9598 dB, and the switch exhibits a good isolation of −49.1809 dB at 43 GHz frequency. RF-Performance is obtained at 26–45 GHz range. So, the proposed switch can be applicable for 5G applications.
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