Designing of RF-MEMS Capacitive Contact Shunt Switch and Its Simulation for S-band Application

Abstract

This paper presents design and simulation of RF-MEMS capacitive type shunt switch. The main parameters of electromagnetic and electromechanical analysis are performed by utilizing COMSOL and HFSS tools. The performance of the switch is enhanced by including perforation and non-uniform meandering technique. Here, to design an RF-MEMS switch with a change in dimensions and different air gaps, and thickness of the beam for low frequency applications. The actuation voltage of the proposed switch having 10.6 V, the upstate capacitance is 6 × 10^−15. The stress of the beam was obtained as 41.7 MPa. The switch has shown higher isolation and lower insertion loss while implementing the microwave and mm-wave circuits. The S-parameters like return and insertion losses are having −22.37 dB, −0.11 dB, the isolation is obtained −21.89 dB at 2 GHz frequency.