Abstract
Experiments on electroforming of Metal‐Oxide‐Metal thin film sandwiches which have been electroformed to exhibit voltage‐controlled negative resistance are summarized and an outline of recent evidence in favour of localized or filamentary conduction is given.A similar review is given of the experiments on oxide sandwich structures which have been formed to exhibit current‐controlled negative resistance or threshold switching and memory switching. Current theories are reviewed briefly. Finally oxide memory devices are compared with those based upon the chalcogenide glasses.
Highlights
A wide range of amorphous and crystalline oxide thin films when sandwiched between suitably selected electrodes can be processed so that they exhibit a wide range of interesting electrical properties
Many workers refer to this process as electroforming
The processes leading to the classes of behaviour in (2) and (3) will each be discussed in more detail and the properties of the formed states reviewed
Summary
A wide range of amorphous and crystalline oxide thin films when sandwiched between suitably selected electrodes (usually metal) can be processed so that they exhibit a wide range of interesting electrical properties Such sandwiches can be made to exhibit voltage-controlled negative resistance (VCN R), current-controlled negative resistance (CCNR), threshold switching, analog memory switching, bistable memory switching and other potentially useful electrical effects. These properties have been reviewed by Dearnaley et al and a later bibliography listed by Agarwal[2] includes some references to switching phenomena. The processes leading to the classes of behaviour in (2) and (3) will each be discussed in more detail and the properties of the formed states reviewed
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