Abstract
Coexistence of volatile threshold switching (TS) and nonvolatile memory switching (MS) behaviors are achieved in a single Ag/SiO 2 /Pt device. After positive forming with high compliance current (I CC ), a conductive filament (CF) consisting of continuous Ag nanocrystals is formed in the device, and the device shows bipolar MS behavior under positive SET and negative RESET. After positive forming process with low I CC , a CF consisting of discrete Ag nanocrystals is formed. The device shows two types of resistive switching behaviors based on the subsequent operation condition. Under low I CC condition, the device shows symmetrical TS in the positive and negative voltage loops. Interesting, when removing the I CC , a unipolar MS with negative differential resistance (NDR) characteristic is observed under negative voltage loop. In addition, the unipolar MS shows good performances, including high uniformity, high reliability and multilevel storage potential.
Published Version
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