Abstract
We have been investigating the materials properties and electrical characteristics of Schottky barriers on electrochemically deposited thin film copper indium diselenide (CIS). Electrochemical deposition is a simple and inexpensive technique of producing thin-film CIS. Stoichiometric control of the as-deposited films is provided by the deposition potential. Native defects, arising from stoichiometric deviations, have allowed the production of both p- and n-type CIS thin films from a single aqueous solution. We have compared the crystallinity, composition and electrical characteristics of as-deposited films to similar films annealed in an Argon atmosphere. The crystallinity showed a significant improvement with annealing. Current versus voltage measurements were used to verify the rectifying behavior of the Schottky barriers and determine their barrier heights. A decrease in the barrier height with increasing carrier density was observed. The capacitance versus voltage dependence of Al Schottky contacts was used to determine the carrier densities in the films. Carrier densities were found to increase with deviation from stoichiometry and decrease with annealing temperature.
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