Study of electrochemically grown copper indium diselenide (CIS) thin films for photovoltaic applications

Abstract

CIS thin films have been grown electrochemically from an aqueous electrolyte at room temperature on fluorine doped tin oxide coated glass substrate at different deposition potentials ranging from −0.7 to −1.0 V versus Ag/AgCl reference electrode. Cyclic voltammetry was studied at slow scan rate to optimize the deposition potential. The thin film samples were selenized in a tubular furnace at 400 °C for 20 min. X-ray diffraction and Raman analysis was used to study the structural properties. Optical absorption, scanning electron microscopy and energy dispersive X-ray analysis (EDAX) have been used to investigate the band-gap, surface morphology and compositional analysis. Electrical properties were studied with the help of current–voltage measurements. Conductivity type for CIS thin films was studied by using photo-electrochemical study. The prominent reflections (112), (204/220) and (312/116) of tetragonal chalcopyrite CIS have been revealed for all as-grown and selenized samples. The energy band gap of the selenized CIS thin film deposited at various deposition potentials was found to be ~1.03 to 1.24 eV. Granular, uniform and void free surface was observed in as-prepared sample, while large clusters were noticed in selenized samples. EDAX results reveal that the stoichiometric CIS thin film are deposited −0.8 V, however, Cu-rich and In-rich CIS layers were grown at lower and higher cathodic deposition potentials, deviated from −0.8 V. The values ideality factor (η) calculated from I–V measurements were found to be decreased upon selenization. The Raman spectra of stoichiometric CIS thin film shows dominant A1 mode with spectral features sensitive to the microcrystalline quality of the layers. A ordered defect compound layer and secondary phases of CuSe are observed in In-rich and Cu-rich CIS layers, respectively.