Electrochemical fabrication of cadmium telluride quantum dots using porous anodized aluminum on a silicon substrate

Abstract

A uniform array of uniformly sized cadmium telluride quantum dots is fabricated in this work. A practical multilayer template, composed of a silicon substrate, several metal layers and porous anodized aluminum is used as a mold to electrochemically grow II–VI semiconductor quantum wires. Only standard silicon processing and in situ electrochemical techniques are used to fabricate the template and quantum dots without the need for thin film handling procedures. Fabrication procedures are described and structural characterization using scanning electron microscopy and optical characterization using luminescence are performed. The extension of this technique to the fabrication of quantum wires and quantum wire heterostructures and superlattices, is discussed.