Abstract
An electrically induced metastable state of the Al/SI-GaAs/Al back-to-back system is reported for the first time. The state is measured by placing the system under reverse bias breakdown conditions and its transient decay observed through conductivity measurements at room temperature. Similar, but not identical metastabilities were also found on Ti/SI-GaAs/Ti and Au/SI-GaAs/Au systems. The objective of this paper is to report on these findings.
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