Abstract
Resistive memory devices with resistive switching characteristics were fabricated based on poly (3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) doping with polyvinyl alcohol. It has been demonstrated that the resistive switching characteristics in the memory device was strongly dependent on the treatment of the polymer blend film by ultraviolet ozone (UV-ozone). The UV-ozone treated device exhibited improved performance with the ON/OFF current ratio of more than 102, and its ON and OFF states can be maintained over 96 h without deterioration. The resistive switching behavior in the UV-ozone treated device was attributed to the formation and rupture of the PEDOT:PSS filaments as well as the narrow conducting paths through the native oxide of aluminum.
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