Abstract
A nonvolatile resistive switching memory device based on active layers of polyvinylcarbazole (PVK) was fabricated by a spin-coating technique, and the electrical characteristics of the devices consisting of SnO2 doped with fluorine (FTO)/PVK/Ag were investigated. The experimental results revealed that the FTO/PVK/Ag device has electrical bistable nonvolatile flash memory behavior. The current remained stable for 2.3 × 103 s in both the ON state and OFF state, and the current in the ON and OFF states of the FTO/PVK/Ag device did not change substantially after 750 pulse read cycles. In addition, based on the electrochemical properties of the PVK, its resistive switching behavior was investigated. This work provides a promising solution for the development of polymer memory devices.
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