Abstract
Two-terminal nonvolatile resistive switching (RS) memory devices based on n-CdSe nanoribbon (NR)/p-Si heterojunction were fabricated. These memory devices exhibited excellent memory characteristics with high current ON/OFF ratio exceeding six orders of magnitude, long retention time over 104 s, and good endurance over 6 months. The capacitance-voltage (C-V) measurement was carried out to confirm the electrons traping and detrapping processes in interface oxide layer. The high-performance of memory devices and simple processing techniques will offer new opportunities for memory applications of one-dimensional nanomaterials.
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