A Survey Paper on Organic–Inorganic Layered Nanohybrid Embedded Polymer-based Non-volatile Resistive Switching Memory Devices

Abstract

Organic–inorganic and polymer-based non-volatile resistive switching memory devices have gained increasing attention because of their excellent data storage capacity, flexibility, low power consumption, durability and widely used in modern electronics. Among the materials, 2D layered nanomaterial and polymer nanocomposites have attracted increasing attention because they can easily be integrated into electronic and optoelectronic devices due to their easy fabrication process, high storage capacity and promising structural properties. Fabrication of bistable memory devices based on organic–inorganic nanohybrid with charge blocking materials and polymer nanocomposite has been broadly elucidated for their extraordinary material properties. Recent enhancement in flexible memory devices based on organic–inorganic semiconductor dispersed in ferroelectric blend polymer has been investigated thoroughly in this review paper. Recent advancement in 2D layered material, ferroelectric polymer and the development of non-volatile memristive devices is extensively explained to understand their importance in flexible devices. Outstanding memory characteristics such as current on/off ratio, Vset, Vreset retention time, endurance of nanohybrid embedded polymer nanocomposite are also discussed meticulously. Next-generation memristor devices based on 2D nanomaterial and ferroelectric polymer with high speed and high density for developing neuromorphic computing system have been demonstrated.