Abstract
The electrical resistivity of the single crystal solid solutions MoxW1−xSe (0 ≦ x ≦ 1), grown by a direct vapour transport technique is studied in the temperature range from 300 to about 600 K. The room temperature values of resistivity are 1.43 Ω cm for p-type 2H-WSe2 and 2.36 Ω cm for p-type 2H-MoSe2. The study reveals that the crystals are intrinsic semiconductors in the temperature range of investigation. Im Temperaturbereich von 300 bis etwa 600 K wird der elektrische Widerstand von Einkristallen des Mischsystems MoxW1−xSe2 (0 ≦ x ≦ 1), die mit einer direkten Dampftransporttechnik hergestellt werden, untersucht. Die Zimmertemperaturwerte des Widerstands betragen 1,43 Ω cm für p-leitendes 2H-WSe2 und 2,36 Ω cm für p-leitendes 2H-MoSe2. Die Untersuchung zeigt, daß die Kristalle Eigenhalbleiter im untersuchten Temperaturbereich sind.
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