Abstract
We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorus doped silicon-on-insulator substrate. Spin injection signals in the non-local scheme were observed up to 120 K, which is the highest value where band transferred spins in Si have ever been reported, and spin diffusion length was estimated to be about 2.25 µm at 8 K. Temperature dependence and injection current dependence of the non-local voltage were also investigated. It is clarified that MgO tunnel barrier is effective for the spin injection into silicon.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
