Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors

Abstract

High-performance boron-doped diamond (B-diamond) metal–oxide–semiconductor field-effect transistors (MOSFETs) are fabricated by improving fabrication process and device structures. Drain current maximum values for the B-diamond MOSFETs operating at room temperature and 300 °C are −1.2 and −10.9 mA/mm, respectively. Both exhibit on/off ratios higher than 109 and their extrinsic transconductance maximum values are 29.0 and 215.7 μS/mm, respectively. These properties surpass the values reported in previous studies.