Abstract
Insulating high dielectric constant (high-k) titanium dioxide (TiO2) films have been deposited on solid phase epitaxially-grown tensilely strained Si1−yCy layers by microwave plasma enhanced chemical vapour deposition using titanium tetrakis isopropoxide (TTIP) as source material and oxygen. Using metal insulator semiconductor capacitor structure, the interface and electrical properties have been studied both at room and high temperature. Good electrical properties are observed in deposited TiO2 thin films.
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