Electrical properties of TiO2 films deposited by a reactive-ionized cluster beam

Abstract

Titanium dioxide films of 100–450-nm thickness were deposited on fused quartz and silicon substrates heated at 350 °C by a reactive-ionized cluster-beam deposition. After the deposition, films were annealed at 600 °C in dry O2 ambient. The electrical properties of TiO2 films and the TiO2-Si interface were analyzed. The dielectric constant of the film after the annealing was in a range of 35–108, which depended on the deposition conditions. The films showed a high breakdown voltage and a sufficiently low interface-state density of 1–2×1011 cm−2 eV−1 at the midgap.