Abstract
The electrical and dielectric properties of reactively sputtered Ta 2O 5 thin films with Cu as the top and bottom electrodes forming a simple metal insulator metal (MIM) structure, Cu/Ta 2O 5/Cu/n-Si, were studied. Ta 2O 5 films subjected to rapid thermal annealing (RTA) at 800°C for 30 s in N 2 ambient crystallized the film, decreased the leakage current density and resulted in reliable time-dependent dielectric breakdown characteristics. The conduction mechanism at low electric fields (<100 kV/cm) is due to Ohmic conduction; however, the Schottky mechanism becomes predominant at high fields (>100 kV/cm). Present studies demonstrate the use of Cu as a potential electrode material to replace the conventional precious metal electrodes for Ta 2O 5 storage capacitors.
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