Abstract
The electrical and reliability properties of reactively sputtered Ta/sub 2/O/sub 5/ thin films with Ta as the bottom electrodes forming simple metal insulator metal (MIM) structure. A Pt/Ta/sub 2/O/sub 5//Ta/SiO/sub 2//n-Si structure was studied. Ta films were deposited on SiO/sub 2//n-Si substrates by sputtering in Ar and in situ annealed at 700/spl deg/C for 10 min in N/sub 2/ at a chamber pressure of 20 mTorr. We compared the effectiveness of both as-deposited and annealed Ta bottom electrode on the leakage characteristics of Ta/sub 2/O/sub 5/ thin films. Ta/sub 2/O/sub 5/ films subjected to rapid thermal annealing (RTA) process at 800/spl deg/C for 30 s in O/sub 2/ crystallized the film, decreased the leakage current density and resulted in reliable time-dependent dielectric breakdown characteristics. We also envisaged the influence of the surface roughness and morphology of the Ta bottom electrode in modifying the resultant microstructure of the annealed Ta/sub 2/O5 films. Present studies demonstrate the use of Ta as a potential bottom electrode material replaces the precious metal electrodes and simplifies the fabrication process of the Ta/sub 2/O/sub 5/ storage capacitor.
Published Version
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