Electrical properties of plasma-grown gate oxides on tensile-strained Si1−yCy alloy

Abstract

Growth of gate-quality ultrathin (<100 Å) oxides directly on tensile-strained Si1−yCy alloy layers has been investigated using microwave O2-plasma discharge. The electrical properties of oxide grown on an Si0.993C0.007 layer have been studied using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 2.5×1011 cm−2 and 2.0×1011 cm−2 eV−1, respectively. Oxide film exhibits hole trapping behaviour under Fowler–Nordheim constant current stressing.