Plasma-grown oxides on silicon with extremely low interface state densities

Abstract

Plasma-grown oxides on silicon with midgap interface state densities less than 10 10 cm −2 eV −1 have been obtained using low process temperatures (<120°C). Slow and fast interface state densities were measured over a wide frequency range by two different techniques: the quasistatic (CV) and the conductance ( G p /w ) methods. Careful attention to system apparatus design, cleanliness and operation are thought to be the main factors responsible for the low interface trap densities.