Abstract
The electrical properties of β-FeSi 2 single crystals grown from solutions were investigated by the Hall effect measurements. The crystals grown from Ga solvent (Ga-β-FeSi 2) and Zn solvent (Zn-β-FeSi 2) showed p-type conduction. The resistivities at RT of Ga-β-FeSi 2 and Zn-β-FeSi 2 were 0.02–0.03 Ω cm (Ga) and 0.4–2 Ω cm (Zn), respectively. The hole concentration and Hall mobility at RT were (1–2)×10 19 cm −3 and 14–16 cm 2/V s for Ga-β-FeSi 2 and (2–4)×10 17 cm −3 and 19–46 cm 2/V s for Zn-β-FeSi 2. The temperature dependence of the hole concentration reveals that ionization energy E A is approximately 0.02 and 0.12 eV for Ga-β-FeSi 2 and Zn-β-FeSi 2, respectively. We also found the intrinsic conduction of β-FeSi 2 above 500 K.
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