Abstract
Single crystalline β-FeSi 2 with a low carrier density has been grown by a temperature gradient solution growth method using Zn solvent. The crystals were polyhedral with clear growth facets. Hall measurements revealed that the crystals showed p-type conductivity. The hole concentration and Hall mobility at room temperature were about 4×10 17 cm −3 and about 19 cm 2 /V s, respectively.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
