Abstract
Nitrogen-doped (N-doped) p-type ZnTe films have been prepared on GaAs(100) substrates by hot wall epitaxy (HWE) for the first time. To obtain high-quality films with high hole concentrations, optimum growth conditions such as the substrate temperature and the growth rate were studied by X-ray and Photoluminescence (PL) measurements. The hole concentration and Hall mobility were 1.1×1017 cm-3 and 52 cm2 V-1 s-1, respectively. The PL spectra of these films had a excitonic emission (I1), indicating high crystalline quality. The activation energy of the nitrogen acceptor was calculated, for the first time, to be 51 meV from the donor-acceptor (DA) emission energy. The existence of nitrogen in the films was confirmed by secondary ion mass spectroscopy (SIMS). The N-doped ZnTe-ZnSe SL's were also prepared and the hole concentration and Hall mobility were 2.3×1018 cm-3 and 36 cm2 V-1 s-1, respectively.
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