Abstract
Dimethylamine gallane (DMAG) was demonstrated to be a promising precursor as a gallium source for metalorganic moleculor beam epitaxy (MOMBE) of GaAs with a low level of carbon incorporaticn. Epitaxial layers of GaAs were obtained at substrate temperatures above 250°C, and the hole concentration decreased with increasing substrate temperature. For the GaAs layer grown at 500°C, the hole concentration and Hall mobility were 1.2×1015 cm-3 and 371 cm2/(V·s), respectively. Low temperature (4.2 K) photoluminescence indicated that the band-to-carbon transition was negligibly small compared with the donor bound exciton peak.
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