Abstract
In this study, the optimum process parameters and the influences of their process parameters were investigated for indium tin oxide chemical-mechanical polishing (ITO-CMP) with a sufficient removal amount and good planarity. Next, the organic light-emitting display (OLED) device with the structure of glass∕ITO∕poly[2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene]∕Al using a polished ITO surface as a bottom electrode (anode) was fabricated. The electrical characteristics, such as sheet resistance and current-voltage (I-V) relationship, are discussed in order to evaluate the possibility of the CMP application for an OLED device using an ITO film. The surface morphology and I-V characteristics of ITO thin film were improved after the CMP process using optimized process parameters compared to that of the as-deposited thin film before the CMP process.
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