Abstract
Na-incorporated Cu(In1−xGax)3Se5(Cu(In1−xGax)3Se5:Na) films were prepared by the deposition of Cu(In1−xGax)3Se5 layers on Na2S-coated substrates. Electrical properties of the Cu(In1−xGax)3Se5:Na films were evaluated by I–V and spectral response measurements of devices with an ITO/ZnO/CdS/Cu(In1−xGax)3Se5:Na/Mo/glass structure. The Cu(In1−xGax)3Se5:Na films with x>0 showed p-type conduction, whereas for Cu(In1−xGax)3Se5 without the addition of Na2S, films with x<0.3 showed n-type conduction. The addition of Na was found to have a strong influence on the electrical properties of Cu(In1−xGax)3Se5 films as well as Cu(In1−xGax)Se2 films.
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