Abstract
Electrical properties of single-crystal InP samples with various initial concentrations of charge carriers were studied in relation to the dose of irradiation with fast reactor neutrons and subsequent heat treatments in the temperature range of 20–900°C. It is shown that the behavior electrical properties depends on the doping level of the starting material and that the heat treatment in the aforementioned range of temperatures results in a complete elimination of radiation defects, which makes it possible to apply the method of nuclear-transmutation doping to InP samples. The contribution of nuclear reaction initiated by intermediate-energy neutrons to the total level of nuclear-transmutation doping amounts to about 10%.
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