Abstract
The results of studying the features of the effect of irradiation with fast and full-spectrum reactor neutrons and subsequent heat treatments on the structural characteristics of InP single crystals are reported. It is shown that, in contrast to other III–V semiconductor compounds, the lattice constant decreases in InP as a result of irradiation with neutrons. Fast neutrons make the major contribution to the variation in the lattice constant. The presence of the component of thermal neutrons that give rise to Sn atoms in the material does not bring about any appreciable variation in the lattice constant. Heat treatment of irradiated samples at temperatures as high as 600°C leads to annealing of radiation defects and recovery of the lattice constant; in the samples irradiated with high neutron fluences, the lattice constant becomes even larger than that before irradiation. An analysis of the obtained experimental data made it possible to assume that the decrease in the InP lattice constant as a result of irradiation with neutrons is mainly caused by the introduction of the PIn antisite defects that give rise to an effect similar to that of vacancy-related defects.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
