Abstract
The quantitiesρ(D) andρ(T) are studied in n- and p-GaAs, irradiated at T = 300°K by H+ ions (5 MeV). It is shown that the resistance of lightly doped GaAs specimens increases from original values ofρ0 to\(\bar \rho _{{\text{max}}} \) ≈109 Ω·cm upon irradiation by H+ ions (5 MeV) to integral fluxes up to D* − 1015 H+/cm2. For D > D* the layer resistance decreases from 109 Ω·cm to ∿ 1 Ω·cm at 300°K. It was found that all the GaAs specimens intensely irradiated by H+ ions had p-type conductivity near 300°K. Isochronic annealing of radiation defects was studied in the temperature interval 20–700°C.
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