Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier

Abstract

It has come to the attention of IOP Publishing that this article should not have been submitted for publication owing to its substantial replication of other published papers by the same author:E L Pankratov 2008 Redistribution of infused and implanted dopants in a multilayer structure during annealing of dopant and radiation defects for the production of a system of p–n junctions Semicond. Sci. Technol. 23 095005 E L Pankratov 2008 Redistribution of dopant during microwave annealing of a multilayer structure for production p–junction J. Appl. Phys. 103 064320 andE L Pankratov 2008 Redistribution of dopant in a multilayer structure during annealing of radiation defects by laser pulses for production an implanted-junction rectifier Phys. Lett. A 372 4510–4516 Consequently the two papers in Journal of Physics D: Applied Physics and Semiconductor Science and Technology have been retracted by IOP Publishing.