Abstract
It has come to the attention of IOP Publishing that this article should not have been submitted for publication owing to its substantial replication of other published papers by the same author:E L Pankratov 2008 Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier J. Phys. D: Appl. Phys. 41 115105 E L Pankratov 2008 Redistribution of dopant during microwave annealing of a multilayer structure for production p–junction J. Appl. Phys. 103 064320 andE L Pankratov 2008 Redistribution of dopant in a multilayer structure during annealing of radiation defects by laser pulses for production an implanted-junction rectifier Phys. Lett. A 372 4510–4516 Consequently the two papers in Semiconductor Science and Technology and Journal of Physics D: Applied Physics have been retracted by IOP Publishing.
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