Abstract
The temperature and frequency dependences of the dielectric constant and electrical conductivity of FeGa0,4In1,6Se4 crystals on alternating current have been studied. In the FeGa0,4In1,6Se4 crystal, normal dispersion occurs in the frequency range 2·102104 Hz, and the lifetime distribution of defects obeys the law n(τ) ~ τ−1.75. With increasing temperature, the reason for an increase in the value of the real part of the dielectric constant is an increase in the concentration of defects. The experimentally observed monotonic decrease in the imaginary part of the dielectric constant depending on frequency indicates the presence of relaxation dispersion in the FeGa0.4In1.6Se4 crystal. It has been established that in the temperature range 294,5 ÷ 343 K at frequencies 2∙102 ÷ 106 Hz for electrical conductivity the law σ ~ f S (0.1 ≤ S ≤ 1.0) is satisfied. It was shown that the conductivity in those crystals is characterized by a band-hopping mechanism. Activation energies were determined from the dependencies.
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