Abstract
Electrodeposited polypyrrole films were formed on chemically modified hydrogen-terminated silicon surfaces that expose tethered pyrrole units. Semiconductor/polypyrrole junctions on the native and modified substrates exhibit diode-like characteristics, with those on the latter substrate exhibiting higher current densities and better ideality factors. Impedance measurements revealed that the improved electrical properties of junctions on the modified substrates were not due to a change in barrier height but rather a consequence of incorporating sites on the silicon surface where the polymer and semiconductor have direct contact.
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