Abstract
MSiC sensors with different gate materials, Pt-TaSixOy, porous Pt and Ir, have been investigated as a function of temperature when the ambient was changed between CO and O2. Four parameters have been investigated; the barrier height, ΦBn, the change in barrier height, ΔΦBn, due to different gas ambient, the series resistance, R, and the ideality factor, n. The diodes with porous Pt and Ir electrodes have the largest change in barrier height at 300∼500°C and at 100∼300°C, respectively. The diode with the TaSixOy layer has a higher ideality factor and higher series resistance. In the oxygen ambient the barrier height of the diodes with porous Pt and Ir electrodes have a large temperature dependence.
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