Abstract
Ferroelectric Bi 4 m x La x Ti 3 O 12 (BLT) thin films with various compositions (x=0.65, 0.70, 0.75) were prepared on Pt/Ti/SiO 2 /Si substrate by MOD method. SEM showed uniform surfaces composed of rod-like grains after annealing at 650. The Bi 3.30 La 0.70 Ti 3 O 12 thin film capacitor showed better ferroelectric properties than other films with different compositions. The remanent polarization and the coercive field of Bi 4 m x La x Ti 3 O 12 (x=0.70) thin film were 31.3 C/cm 2 and 117.2kV/cm, respectively. Moreover the capacitor did not show any significant fatigue up to 3 2 10 10 switching cycles at 5V.
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