Abstract
The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.
Highlights
Materials for thin film solar cells are the subject of researcher interest
The basic CIS/CIGS cell structure is deposited on soda lime glass, but can be obtained on flexible substrates made of metal [2], ceramic [3], ultrathin glass [4] or thin stainless steel [5]
Metal layers were deposited on the soda lime glass (SLG)
Summary
Materials for thin film solar cells are the subject of researcher interest Their good technological parameters and application in low-cost, high-rate semiconductors with a thickness of few microns are main objectives to be achieved. High absorption coefficient for solar radiation and inherent p-type conductivity make CIGS structure one of the most promising absorber material forsolar cell application. TCO materials are mainly based on tin oxide (SnO2), indium tin oxide (In2O3), zinc oxide (ZnO) or theirs combinations, but the most widely applied is indium tin oxide (ITO). This material is characterized by good optical and electrical properties, but its quantity is limited, because of uniqueness and cost of indium element. Completion of the CIGS structure is current-collecting grid, which can be made of aluminum
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