Abstract
The growth rate of the Cu nano-thin film was investigated based on the magnetron sputtering method under different process parameters and different sputtering method. Firstly, some samples of Cu nano-thin films were sputtered on the glass substrate by changing different sputtering power at the direct current (DC) magnetron sputtering method. Secondly, some Cu nano-thin film samples were prepared by using the DC magnetron sputtering method and radio frequency (RF) magnetron sputtering methods. The thickness of the Cu nano-thin film was test by the film thickness gauge, and then the growth rate of the Cu nano-thin film was obtained. These results show that the sputtering power is very important for the growth rate. The growth rate of the Cu nano-thin film increases with the increase of the sputtering power at the DC magnetron sputtering method; the growth rate of the Cu nano-thin film prepared under the DC magnetron sputtering method is about ten times of that prepared under the RF magnetron sputtering method.
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