Electrical properties of a single Ni-contact SnO2 nanowire field-effect transistors

Abstract

Single crystalline SnO2 nanowires were grown using chemical vapor deposition (CVD) method and fabricated into a single-nanowire field-effect transistor (FET) with Ni contact electrodes by photolithography. Investigations show good field-effect electrical performance was achieved using the Ni-contact single-SnO2 nanowire device. Field effect mobility, on/off ratio and carrier species were 73.3 ± 4.17 cm2/V-s (for 10 devices), ~106, and electrons, respectively. Furthermore, a low barrier height of 45.6 meV between the Ni contact and as-grown SnO2 nanowire was achieved based on temperature dependent current-voltage measurement. It is thought this low barrier height improved field-effect transistor performance making SnO2 nanomaterial devices practicable.