Abstract

Electrochemically gated field-effect transistors are fabricated with single crystalline SnO2 nanowires as a transistor channel. Excellent transistor performance and a very low-voltage operation (≤2 V) have been demonstrated. Thermal stability of the FETs is systematically examined up to 180 °C; while unchanged transistor characteristics are obtained up to 70 °C; short exposure at 110 °C is also found permissible, making such devices compatible to be integrated directly to organic photovoltaics or to various biomedical appliances.

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