Abstract
A novel vertical ferroelectric tunnel junction based TFET design with selective buried oxide (SELBOX) is proposed and analytically simulated. The tunneling area is augmented as the tunnel junction remains perpendicular to the channel direction. Moreover, the device drive current boosts up due to the incorporation of ferroelectric material at the tunnel junction along with the n+ pocket. OFF current is restrained at a lower value by releasing the OFF-state charge carriers through the gap in the buried oxide. Through systematic simulation the dimensions of the device architecture are optimized to study its impact on the electrical parameters and to exaggerate the current ratio. An enhanced ION/IOFF current ratio of 4.1 × 1013 with substantially minimum Subthreshold Swing (SS) of 39 mV/decade is achieved. Further, the affectability of different noise components on the device performance has been investigated considering a range of frequency. The proposed TFET design is benchmarked with other existing novel TFETs and is proved to be a better design with improved performance considering ON state current and SS.
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