Electrical noise in Circular Gate Tunnel FET in presence of interface traps

Abstract

This paper presents a novel architecture of Tunnel Field Effect Transistor (TFET) with a circular gate and reports the effect of electrical noise on the device by comparing the results with a hetero-junction TFET. TCAD simulations involving uniform and Gaussian trap distribution conclude that the proposed Circular Gate TFET shows lesser values of noise spectral density than hetero-junction TFET. At lower frequencies, both generation–recombination noise and flicker noise dominate; at mid frequencies, only flicker noise contributes and at higher frequencies, diffusion noise dominates. Drain current in Circular Gate TFET is more prone to traps than Hetero-Junction TFET. The use of gate–drain underlap enhances the cut-off frequency of the CG-TFET in presence of Gaussian traps and makes it suitable for digital applications.